Selective deposition of copper by chemical vapor deposition using Cu(HFA)2
Selective deposition of copper by chemical vapor deposition using Cu(HFA)2
复制标题
使用 Cu(HFA)2 通过化学气相沉积选择性沉积铜
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
W. Gill
中科院分区：
文献类型：
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作者：
Do‐Heyoung Kim;R. H. Wentorf;W. Gill
在冷壁式立式流动反应器中，系统地研究了六氟乙酰丙酮铜(Cu(HFA)2)与纯氢或氢气/Ar混合气体(1：3)在金属或金属衬底上化学气相沉积铜对二氧化硅的选择性，考察了沉积温度(310-390 °C)、总压力(2-10Torr)和进口前驱体摩尔分数(0.008-0.09)对铜选择性的影响。沉积温度是最重要的参数。在上述条件下，温度为310~360 °C时可选择性沉积。俄歇电子能谱深度分布表明了薄膜的成分。观察到由于氧化硅表面的缺陷，铜的局部形核现象。这些研究有助于澄清文献中报道的一些不一致的结果，因为它们精确地确定了观察到选择性沉积铜的温度、压力和气相组成条件。
The selectivity of chemical vapor deposition copper for metal or metallic substrates in preference to silicon dioxide was investigated systematically using copper (II) hexafluoroacetylacetonate, Cu(HFA)2, with pure hydrogen or hydrogen/argon mixtures (1:3) in a cold wall type vertical flow reactor as a function of measured total pressure (2–10 Torr), deposition temperature (310–390 °C), and inlet precursor mole fraction (0.008–0.09). The deposition temperature was found to be the most important parameter. Temperatures of 310–360 °C resulted in selective deposition under the above conditions. Auger electron spectroscopy depth profiles indicate the composition of the films. Some local nucleation of copper due to the surface imperfections on silicon oxide was observed. These studies help to clarify some discordant results reported in the literature by determining to a good approximation the conditions of temperature, pressure and gas phase composition under which selective deposition of copper was observed.