On-Wafer Cryogenic Characterization Technique of an SIS-Based Frequency Up and Down Converter
On-Wafer Cryogenic Characterization Technique of an SIS-Based Frequency Up and Down Converter
复制标题
基于 SIS 的上下变频器的晶圆上低温表征技术
DOI：
10.1007/s10909-020-02414-5
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发表时间：
2020
影响因子：
2
通讯作者：
and Y. Kozuki
中科院分区：
文献类型：
--
作者：
T. Kojima;Y. Uzawa;W. Shan;and Y. Kozuki
介绍了一种基于超导体-绝缘体-超导体(SIS)隧道结的在片上频率上下变频器的在片表征系统和校准技术。该测量系统使用4-K探针站和矢量网络分析仪相结合，允许测量上、下转换增益和反射系数。我们采用并验证了标量混频器校准技术，以准确地表征转换特性。文中给出了详细的测量方法，并用SIS变频器样机进行了验证。
This paper describes an on-wafer characterization system and calibration technique for frequency up and down converters based on a superconductor–insulator–superconductor (SIS) tunnel junction. The measurement system uses a 4-K probe station in combination with a vector network analyzer which allows measurement of both up- and down-conversion gains and reflection coefficients. We employed and verified a scalar mixer calibration technique for accurate characterization of the conversion properties. We present the detailed measurement technique and verification using an SIS frequency converter sample.