Temperature dependence of impact ionization in GaAs
Temperature dependence of impact ionization in GaAs
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DOI：
10.1109/ted.2003.816918
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发表时间：
2003-10-01
影响因子：
3.1
通讯作者：
Rees, GJ
中科院分区：
文献类型：
--
作者：
Groves, C;Ghin, R;Rees, GJ
砷化镓（GaAs）中电子和空穴碰撞电离的温度依赖性已经在20 K和500 K之间的光电倍增测量中确定。发现由于声子散射的增加，温度的升高抑制了冲击电离。雪崩倍增的温度变化随着雪崩区宽度的减小而减小，这种效应可以解释为在相应的电离路径长度的减小中声子散射的减小。推导了有效电子和空穴电离系数，并证明了它们可以准确地预测p(+) in（+）二极管的倍增特性和击穿电压作为温度的函数，其i区薄至0.5 mum。
The temperature dependence of electron and hole impact ionization in gallium arsenide (GaAs) has been determined from photomultiplication measurements at temperatures between 20 K and 500 K. It is found that impact ionization is suppressed by increasing temperature because of the increase in phonon scattering. Temperature variations in avalanche multiplication are shown to decrease with decreasing avalanching region width, and the effect is interpreted in terms of the reduced phonon scattering in the correspondingly reduced ionization path length. Effective electron and hole ionization coefficients are derived and are shown to predict accurately multiplication characteristics and breakdown voltage as a function of temperature in p(+) in(+) diodes with i-regions as thin as 0.5 mum.