Impact of NO Annealing on Flatband Voltage Instability due to Charge Trapping in SiС MOS Devices
Impact of NO Annealing on Flatband Voltage Instability due to Charge Trapping in SiС MOS Devices
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NO 退火对 SiС MOS 器件中电荷俘获引起的平带电压不稳定性的影响
DOI：
10.4028/www.scientific.net/msf.858.599
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Heiji Watanabe
中科院分区：
文献类型：
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作者：
Yoshihito Katsu;T. Hosoi;Y. Nanen;T. Kimoto;T. Shimura;Heiji Watanabe
我们通过测量紫外照射下恒定负栅电压应力下的平坦带电压（VFB）位移来评估NO退火对SiC金属氧化物半导体（MOS）电容器空穴捕获特性的影响。在低应力电压下，NO退火可以抑制空穴捕获引起的VFB位移。然而，在高应力电压条件下，NO退火器件的VFB位移随应力时间的增加而显著增加，而没有NO退火的器件仅表现出轻微的位移。这一结果表明，NO退火增加了空穴陷阱的产生，导致SiC-MOS器件的长期可靠性下降。
We evaluated the effect of NO annealing on hole trapping characteristic of SiC metal-oxide-semiconductor (MOS) capacitor by measuring flatband voltage (VFB) shifts during a constant negative gate voltage stress under UV illumination. Under low stress voltages, the VFB shift due to hole trapping was found to be suppressed by NO annealing. However, the VFB shift of the NO-annealed device increases significantly with stress time under high stress voltage conditions, while the device without NO annealing showed only a slight shift. This result implies that NO annealing enhances generation of hole traps, leading to the degradation of SiC-MOS devices in long-term reliability.