Modeling and Simulation of DNA Origami based Electronic Read-only Memory
Modeling and Simulation of DNA Origami based Electronic Read-only Memory
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DOI：
10.1109/nano54668.2022.9928676
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发表时间：
2022-07
期刊：
影响因子：
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通讯作者：
Arpan De;Hashem M. Mohammad;Yiren Wang;R. Kubendran;Arindam K. Das;M. Anantram
中科院分区：
文献类型：
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作者：
Arpan De;Hashem M. Mohammad;Yiren Wang;R. Kubendran;Arindam K. Das;M. Anantram
脱氧核糖核酸（DNA）已成为设计下一代超高密度存储设备的一种有前途的构建模块。尽管DNA在自然界中具有高度的耐久性和极高的密度，但其作为存储设备基础的潜力目前受到一些限制的阻碍，例如昂贵且复杂的制造工艺以及耗时的读写操作。在本文中，我们提出将DNA交叉阵列架构用于一种电可读的只读存储器（DNA - ROM）。对于DNA - ROM，我们分别选择了两条DNA链来表示比特1和比特0。通过“接触 - DNA - 接触”装置对DNA电荷传输进行了研究。从DNA电荷传输研究中获得的结果已被用于分析交叉阵列。通过将一幅图像加载到128×128的交叉阵列上对性能进行了分析。对于该应用，我们观察到误码率为4.52%，功耗为6.75微瓦。
Deoxyribonucleic acid (DNA) has emerged as a promising building block for designing next-generation ultra-high density storage devices. Although DNA is highly durable and extremely high density in nature, its potential as the basis of storage devices is currently hindered by limitations such as expensive and complex fabrication processes and time-consuming read-write operations. In this article, we propose the use of a DNA crossbar array architecture for an electrically-readable Read-Only Memory (DNA-ROM). For DNA-ROM, we have chosen two DNA strands for representing Bit 1 and Bit 0 respectively. DNA charge transport has been studied through a ‘contact-DNA-contact’ setup. The results obtained from the DNA charge transport study have been used to analyze the crossbar array. The performance has been analyzed by loading an image onto a 128×128 crossbar. For this application, we have observed a bit error rate of 4.52% and power consumption of 6.75 µW.