Effect of NaOH solution on surface textured ZnO: Al films prepared by pulsed direct current magnetron sputtering
Effect of NaOH solution on surface textured ZnO: Al films prepared by pulsed direct current magnetron sputtering
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DOI：
10.1016/j.mssp.2012.04.007
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发表时间：
2012-10
影响因子：
4.1
通讯作者：
Ying Wang;Hualin Wang;Chao-Qian Liu;Yun Wang;S. Peng;W. Chai
中科院分区：
文献类型：
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作者：
Ying Wang;Hualin Wang;Chao-Qian Liu;Yun Wang;S. Peng;W. Chai
采用脉冲直流磁控溅射法在270°C衬底温度下制备了Al掺杂ZnO（ZnO：Al，AZO）透明导电薄膜。采用5wt%的NaOH溶液在室温下对AZO薄膜进行刻蚀，成功地获得了表面织构化的AZO薄膜。讨论了由刻蚀时间控制的刻蚀过程与表面织构的关系。随着刻蚀时间的延长，AZO薄膜的织构形貌逐渐清晰，刻蚀30 min后的AZO薄膜呈现出均匀、清晰的火山口状表面织构。相应地，雾度和电阻率随着蚀刻时间的增加而增加。刻蚀30 min后的AZO薄膜电阻率为3.2×10 - 3Ωcm。
Transparent conducting Al-doped ZnO (ZnO:Al, AZO) thin films were prepared at substrate temperature of 270°C by pulsed direct current magnetron sputtering. NaOH solution (5wt%) was employed to etch the AZO films at room temperature, and the surface textured AZO films were obtained successfully. The relationship between the surface textured structures and the etching process controlled by etching time was discussed. The textured morphology of the etched AZO films became clear as increasing the etching time, and the AZO film etched for 30min exhibited uniformly and distinctly crater-like surface textured structure. Correspondingly, the haze and the resistivity increased with the increasing etching time. And the resistivity of the AZO film etched for 30min was 3.2×10−3Ωcm.