Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures
Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures
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DOI：
10.1063/1.2436720
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发表时间：
2007-01-22
影响因子：
4
通讯作者：
Hwang, Hyunsang
中科院分区：
文献类型：
--
作者：
Dong, R.;Lee, D. S.;Hwang, Hyunsang
在室温下表现出在高阻态和低阻态之间可逆电阻切换的材料对于当今的半导体技术是有吸引力的。在这封信中，重复滞后和电阻开关特性的金属-CuxO-金属（M-CuxO-M）异质结构的低电压驱动的证明。M-CuxO-M异质结构的制造与标准互补金属氧化物半导体工艺完全兼容。讨论了器件的迟滞特性和阻变特性。通过对制备参数的精确控制，M-CuxO-M异质结构显示出良好的保留特性。(c)2007年，美国物理学会。
Materials showing reversible resistance switching between high-resistance state and low-resistance state at room temperature are attractive for today's semiconductor technology. In this letter, the reproducible hysteresis and resistive switching characteristics of metal-CuxO-metal (M-CuxO-M) heterostructures driven by low voltages are demonstrated. The fabrication of the M-CuxO-M heterostructures is fully compatible with the standard complementary metal-oxide semiconductor process. The hysteresis and resistive switching behavior are discussed. The good retention characteristics are exhibited in the M-CuxO-M heterostructures by the accurate controlling of the preparation parameters. (c) 2007 American Institute of Physics.