Use of a Multiple Hydride Donor To Achieve an n-Doped Polymer with High Solvent Resistance
Use of a Multiple Hydride Donor To Achieve an n-Doped Polymer with High Solvent Resistance
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使用多重氢化物供体获得具有高耐溶剂性的 n 掺杂聚合物
DOI：
10.1021/acsami.2c05724
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发表时间：
2022
影响因子：
9.5
通讯作者：
Koch, Norbert
中科院分区：
文献类型：
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作者：
Saeedifard, Farzaneh;Lungwitz, Dominique;Yu, Zi-Di;Schneider, Sebastian;Mansour, Ahmed E.;Opitz, Andreas;Barlow, Stephen;Toney, Michael F.;Pei, Jian;Koch, Norbert
使掺杂的半导体聚合物层不溶解的能力可以帮助实现高效的多层溶液处理的电子和光电器件的制造。在这里，我们提出了一种有前途的方法，同时n-掺杂和很大程度上不溶共轭聚合物薄膜使用四[{4-（1，3-二甲基-2，3-二氢-1H-苯并[d]咪唑-2-基）苯氧基}甲基]甲烷（四-O-DMBI-H），它由四个2，3-二氢-1H-苯并咪唑（DMBI-H）n-掺杂剂部分共价连接到另一个。用tetrakis-O-DMBI-H掺杂噻吩稠合的基于苯并二呋喃二酮的低聚（对亚苯基亚乙烯基）-共噻吩聚合物（TBDOPV-T）导致具有15 S cm-1的体电导率的高度n掺杂的膜。光吸收光谱提供的证据为膜保留率为1093%，浸泡后的ino-dichlorobenzene为5分钟。在n-掺杂的聚合物中的电荷载流子的光吸收签名减少仅略多于在这些条件下的中性聚合物，表明暴露于溶剂也导致可以忽略不计的脱掺杂的膜。此外，对与另一未掺杂的聚合物膜接触的四-O-DMBI-H掺杂的TBDOPV-T膜的热处理研究表明TBDOPV-T中分子掺杂剂的固定。这归因于每个掺杂剂四价阳离子和多达四个附近的阴离子掺杂的聚合物链段之间的多重静电相互作用。
The ability to insolubilize doped semiconducting polymer layers can help enable the fabrication of efficient multilayer solution-processed electronic and optoelectronic devices. Here, we present a promising approach to simultaneously n-dope and largely insolubilize conjugated polymer films using tetrakis[{4-(1,3-dimethyl-2,3-dihydro-1H-benzo[d]imidazol-2-yl)phenoxy}methyl]methane (tetrakis-O-DMBI-H), which consists of four 2,3-dihydro-1H-benzoimidazole (DMBI-H) n-dopant moieties covalently linked to one another. Doping a thiophene-fused benzodifurandione-based oligo(p-phenylenevinylene)-co-thiophene polymer (TBDOPV-T) with tetrakis-O-DMBI-H results in a highly n-doped film with bulk conductivity of 15 S cm–1. Optical absorption spectra provide evidence for film retention of ∼93% after immersion ino-dichlorobenzene for 5 min. The optical absorption signature of the charge carriers in the n-doped polymer decreases only slightly more than that of the neutral polymer under these conditions, indicating that the exposure to solvent also results in negligible dedoping of the film. Moreover, thermal treatment studies on a tetrakis-O-DMBI-H-doped TBDOPV-T film in contact with another undoped polymer film indicate immobilization of the molecular dopant in TBDOPV-T. This is attributed to the multiple electrostatic interactions between each dopant tetracation and up to four nearby anionic doped polymer segments.