Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies
Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies
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DOI：
10.1109/tns.2015.2414426
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发表时间：
2015-08-01
影响因子：
1.8
通讯作者：
King, M. P.
中科院分区：
文献类型：
--
作者：
Esqueda, I. Sanchez;Barnaby, H. J.;King, M. P.
本文提出了一种基于物理的紧凑建模方法，该方法将总电离剂量 (TID) 和应力引起的缺陷的影响纳入金属氧化物半导体 (MOS) 器件和集成电路 (IC) 的模拟中。该方法利用表面电势 (psi(s)) 的计算来捕获氧化物俘获电荷和界面陷阱的电荷贡献，并描述它们对 MOS 静电和器件工作特性的影响，作为电离辐射暴露和老化效应的函数。该建模方法针对体硅和绝缘体上硅 (SOI) MOS 器件进行了演示。该配方通过 TCAD 模拟以及模型计算和辐照设备实验特性的比较进行了验证。该建模方法适用于模拟先进 MOS 器件和 IC 中的 TID 和老化效应，并且与现代 MOSFET 紧凑建模技术兼容。对 SRAM 单元中的 TID 和老化效应进行了电路级演示。
This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (psi(s)) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental characteristics from irradiated devices. The modeling approach is suitable for simulating TID and aging effects in advanced MOS devices and ICs, and is compatible with modern MOSFET compact modeling techniques. A circuit-level demonstration is given for TID and aging effects in SRAM cells.