Rabi oscillations in semiconductor quantum dots revisited: Influence of LO-phonon collisions
Rabi oscillations in semiconductor quantum dots revisited: Influence of LO-phonon collisions
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DOI：
10.1063/1.3140534
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发表时间：
2009-05
影响因子：
4
通讯作者：
K. Schuh;J. Seebeck;M. Lorke;F. Jahnke
中科院分区：
文献类型：
--
作者：
K. Schuh;J. Seebeck;M. Lorke;F. Jahnke
半导体量子点的相干性对各种应用具有重要意义。以往对这些系统退相干的研究主要集中在与LA声子的相互作用上，只引起退相。相反，与LO声子的相互作用还会引起载流子散射。为了表明减相和载流子散射的综合影响的重要性，我们使用载流子- lo -声子相互作用的量子动力学处理重新审视了半导体量子点中Rabi振荡的情况。
Coherence properties of semiconductor quantum dots are of central importance for a variety of applications. Previous studies of decoherence in these systems mainly focused on the interaction with LA phonons, only giving rise to dephasing. In contrast, the interaction with LO phonons additionally causes carrier scattering. To show the importance of the combined influence of dephasing and carrier scattering, we revisit the case of Rabi oscillations in semiconductor quantum dots using a quantum-kinetic treatment of the carrier-LO-phonon interaction.