The effect of the underlying substrate on crystallization kinetics of TiNi thin films
The effect of the underlying substrate on crystallization kinetics of TiNi thin films
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DOI：
10.1016/j.jnoncrysol.2008.06.004
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发表时间：
2008-10
影响因子：
3.5
通讯作者：
Y. Lei;W. Cai;X. An;L. Gao
中科院分区：
文献类型：
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作者：
Y. Lei;W. Cai;X. An;L. Gao
研究了在SiO2（或NaCl）/Al薄膜上沉积的非晶TiNi薄膜的结晶动力学。非晶附着基板薄膜的结晶速率显著加快。加速源于薄膜/晶圆中间界面的存在，该界面作为晶相生长的二维核。在DSC非等温退火过程中，测定了两种底层TiNi薄膜的表观活化能分别为352.96和403.69kJ/mol，低于前人研究的独立薄膜。在等温退火过程中，结晶动力学参数明显下降，体现在758 ~ 775K之间的Avrami指数n较低（1.35 ~ 2.11），孵育时间τ较短（0.1 ~ 0.4min）。
The crystallization kinetics of amorphous thin TiNi films deposited on SiO2(or NaCl)/Al foils substrates were investigated. A dramatic acceleration of the crystallization rate was observed for amorphous attached-substrate films. The acceleration originated from the presence of the thin film/middle-wafer interface which served as a two-dimensional nucleus for the growth of the crystalline phase. In the process of non-isothermal annealing by DSC, apparent activation energies for two kinds of underlying thin TiNi films were determined to be 352.96 and 403.69kJ/mol, respectively, which was lower than those free-standing films studied in previous works. For the process of isothermal annealing, the crystallization kinetics parameters had remarked drop, reflected from the lower Avrami exponent n (the range of 1.35–2.11) and shorter incubation time τ (the range of 0.1–0.4min) between 758 and 775K.