Atomic force microscope tip-induced local oxidation of silicon: Kinetics, mechanism, and nanofabrication
Atomic force microscope tip-induced local oxidation of silicon: Kinetics, mechanism, and nanofabrication
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DOI：
10.1063/1.119521
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发表时间：
1997-07-14
影响因子：
4
通讯作者：
Martel, R
中科院分区：
文献类型：
--
作者：
Avouris, P;Hertel, T;Martel, R
原子力显微镜诱导的硅局部氧化是一种具有很强潜力的用于近端探针纳米纤维的工艺。在这里，我们研究其动力学和机制，以及电场强度，环境湿度和氧化物厚度等因素如何影响其速率和分辨率。电化学电流的检测证明了该过程的阳极氧化特性。初始非常快的氧化速率被证明是显着放缓作为一个自限性行为的结果，从建立的应力和电场强度的降低。横向分辨率是由电场在冷凝水膜中的散焦决定的，其范围是环境湿度的函数。(C)1997年美国物理学会。
Atomic force microscope induced local oxidation of silicon is a process with a strong potential for use in proximal probe nanofabrication. Here we examine its kinetics and mechanism and how such factors as the strength of the electric field, ambient humidity, and thickness of the oxide affect its rate and resolution. Detection of electrochemical currents proves the anodization character of the process. Initial very fast oxidation rates are shown to slow down dramatically as a result of a self-limiting behavior resulting from the build up of stress and a reduction of the electric field strength. The lateral resolution is determined by the defocusing of the electric field in a condensed water film whose extent is a function of ambient humidity. (C) 1997 American Institute of Physics.