Comparison between Effects of PECVD-SiOx and Thermal ALD-AlOx Passivation Layers on Characteristics of Amorphous InGaZnO TFTs
Comparison between Effects of PECVD-SiOx and Thermal ALD-AlOx Passivation Layers on Characteristics of Amorphous InGaZnO TFTs
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PECVD-SiOx和热ALD-AlOx钝化层对非晶InGaZnO TFT特性的影响比较
DOI：
10.1149/2.0231507jss
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发表时间：
2015
影响因子：
2.2
通讯作者：
H. Tanabe
中科院分区：
文献类型：
--
作者：
J. Tanaka;Y. Ueoka;K. Yoshitsugu;M. Fujii;Y. Ishikawa;Y. Uraoka;K. Takechi;H. Tanabe
研究了钝化层对非晶InGaZnO 4薄膜晶体管（a-InGaZnO TFT）特性的影响，比较了热原子层淀积AlOx薄膜（TALD-AlOx）和等离子体增强化学气相淀积SiOx薄膜（PECVD-SiOx）。在最终退火之前和之后的PECVD-SiOx TFT分别表现出导电和驼峰特性。相比之下，TALD-AlOx TFT在最终退火之前和之后都表现出增强特性。从二次离子质谱分析，我们发现，TALD-AlOx有效地抑制H注入到下面的a-InGaZnO层相比，PECVD-SiOx。我们相信这种H注入的抑制导致TALD-AlOx TFT的增强特性。另一方面，PECVD-SiOx TFT的导电和驼峰特性可以归因于注入a-InGaZnO层中的较高浓度的H和由于PECVD引起的离子轰击。从这些结果中，我们认为，等离子体自由TALD-AlOx是有效的实现良好的特性，在a-InGaZnO TFT。作者（S）2015由ECS发布。这是一篇开放获取的文章，根据知识共享署名4.0许可证（CC BY，http：//creativecommons.org/licenses/by/4.0/）的条款分发，该许可证允许在任何媒体上不受限制地重复使用作品，前提是正确引用原始作品。[DOI：10.1149/2.0231507jss]版权所有。
We investigated the effects of the passivation layer on the characteristics of amorphous InGaZnO4 thin-film transistors (a-InGaZnO TFTs) by comparing AlOx film by thermal atomic layer deposition (TALD-AlOx) with SiOx film by plasma enhanced chemical vapor deposition (PECVD-SiOx). The PECVD-SiOx TFTs before and after final annealing exhibited conductive and hump characteristics, respectively. In contrast, both TALD-AlOx TFTs before and after final annealing exhibited enhancement characteristics. From secondary ion mass spectroscopy analysis, we found that TALD-AlOx effectively suppresses H injection into the underneath of the a-InGaZnO layer compared with PECVD-SiOx. We believe such suppression of H injection leads to the enhancement characteristics of TALD-AlOx TFTs. On the other hand, the conductive and hump characteristics of PECVD-SiOx TFTs may be attributed to a higher concentration of H injected into the a-InGaZnO layer and ion bombardment due to PECVD. From these results, we argue that plasma-free TALD-AlOx is effective for achieving good characteristics in a-InGaZnO TFTs. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0231507jss] All rights reserved.