Low-frequency dispersion and state dependency in modem microwave III-V HEMTs
Low-frequency dispersion and state dependency in modem microwave III-V HEMTs
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现代微波 III-V HEMT 中的低频色散和状态依赖性
DOI：
10.23919/gemic.2018.8335056
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
M. Schlechtweg
中科院分区：
文献类型：
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作者：
F. van Raay;D. Schwantuschke;A. Leuther;P. Brückner;D. Peschel;R. Quay;M. Schlechtweg
研究了栅极长度均为 100 nm 的 AlGaN/GaN HEMT 和 InAlAs/InGaAs mHEMT 技术。低频色散和状态依赖性与平均栅极和漏极电压的关系。基于全面的 DC-CW 和脉冲 RF 小信号表征，结果表明 GaN HEMT 表现出这两种效应，而 mHEMT 几乎没有状态依赖性。最近提出的积分变换大信号 FET 模型的新公式能够描述脉冲 RF 甚至 CW 负载牵引操作条件下的效应。
An AlGaN/GaN HEMT- and an InAlAs/InGaAs mHEMT technology, both with a gate-length of 100 nm, are investigated w.r.t. low-frequency dispersion and state dependency vs. average gate and drain voltages. Based on a comprehensive DC-CW and pulsed-RF small-signal characterization, it is shown that the GaN HEMT shows both effects, while the mHEMT is nearly free of state dependency. A new formulation of the recently proposed integral transform large-signal FET model is capable of describing both effects in pulsed-RF and even in CW load-pull operation conditions.