Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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DOI：
10.1038/nature03090
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发表时间：
2004-11-25
期刊：
影响因子：
64.8
通讯作者：
Hosono, H
中科院分区：
文献类型：
--
作者：
Nomura, K;Ohta, H;Hosono, H
在柔性衬底上形成的透明电子设备有望满足硅基电子产品无法提供解决方案的新兴技术需求。主动柔性应用的例子包括纸显示器和可穿戴计算机(1)。到目前为止，主要研究的是基于氢化非晶硅(a-Si：H)(2-5)和有机半导体(2，6-10)的柔性器件。然而，这些器件的性能已经不足以在实际计算机和电流驱动的有机发光二极管显示器中用作晶体管。由于加工温度和器件性能之间的权衡，制造高性能器件是具有挑战性的。为了解决这一问题，我们提出了一种新的半导体材料--In-Ga-Zn-O系透明非晶态氧化物半导体(a-IGZO)--用于透明薄膜晶体管的有源沟道。A-IGZO在室温下沉积在聚对苯二甲酸乙二醇酯上，表现出超过10 cm(2)V-1 S(-1)的霍尔效应迁移率，比氢化非晶硅的迁移率大一个数量级。在聚对苯二甲酸乙二醇酯薄膜上制备的TTFT具有6-9 cm(2)V-1 S(-1)的饱和迁移率，并且在重复弯曲过程中器件特性稳定。
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers(1). So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)(2-5) and organic semiconductors(2,6-10) have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material-namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)-for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm(2) V-1 s(-1), which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6-9 cm(2) V-1 s(-1), and device characteristics are stable during repetitive bending of the TTFT sheet.