High-Speed Modulation of Lateral p-i-n Diode Structure Electro-Absorption Modulator Integrated With DFB Laser
High-Speed Modulation of Lateral p-i-n Diode Structure Electro-Absorption Modulator Integrated With DFB Laser
复制标题
集成DFB激光器的横向p-i-n二极管结构电吸收调制器的高速调制
DOI：
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发表时间：
2015
影响因子：
4.7
通讯作者：
S. Matsuo
中科院分区：
文献类型：
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作者：
K. Hasebe;Tomonari Sato;K. Takeda;T. Fujii;T. Kakitsuka;S. Matsuo
大规模光子集成电路（PIC）对于降低光网络的成本和功耗至关重要。通过热扩散和离子注入的选择性掺杂适合于制造PIC，因为它能够掺杂到期望的区域中而无需晶体生长。本文报道了一种集成DFB激光器的横向p-i-n二极管结构电吸收调制器（EAM）的研制。由于横向p-i-n结构，我们能够使用当电场平行于量子阱施加时发生的激子吸收峰的加宽。通过比较平行电场和垂直电场下的吸收谱变化，发现平行电场下吸收系数变化不大，但在低电场下吸收谱变化较大。因此，在我们的设计中，我们使EAM的长度大于传统的垂直电场EAM。然而，由于横向EAM的寄生电容低，我们可以期望实现高速操作。利用200 μ m长的EAM制作的器件，我们已经实现了50 Gb/s的操作，具有清晰的眼张开。我们还实现了一个边模抑制比超过50分贝，通过使用表面光栅。这些结果表明，我们的横向EADFB激光器是非常有前途的大规模PIC集成光源，我们的制造工艺的基础上选择性掺杂是适合他们。
Large-scale photonic integrated circuits (PICs) are essential for reducing the cost and power consumption of optical networks. Selective doping by means of thermal diffusion and ion implantation is suitable for fabricating PICs because it enables doping into desired regions without crystal growth. In this paper, we report the fabrication of a lateral-p-i-n-diode-structure electro-absorption modulator (EAM) integrated with a DFB (EADFB) laser. Owing to the lateral p-i-n structure, we are able to use the broadening of the exciton absorption peak that occurs when the electric field is applied parallel to the quantum well. By comparing the calculated absorption spectrum change for parallel and vertical electric fields, we found that it occurs with a low electrical field, although the amount of absorption coefficient change is small for the parallel one. Thus, in our design, we make the EAM length larger than that of the conventional vertical electric field EAM. However, because of the low parasitic capacitance of the lateral EAM, we can expect to achieve high-speed operation. With a fabricated device with a 200-μm-long EAM, we have achieved 50-Gb/s operation with clear eye opening. We have also achieved a side-mode suppression ratio of more than 50 dB by using a surface grating. These results indicate that our lateral EADFB laser is very promising as an integrated light source for large-scale PICs and that our fabrication process based on selective doping is suitable for them.