High mobility top-gate and dual-gate polymer thin-film transistors based on diketopyrrolopyrrole-naphthalene copolymer
High mobility top-gate and dual-gate polymer thin-film transistors based on diketopyrrolopyrrole-naphthalene copolymer
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基于二酮吡咯并吡咯-萘共聚物的高迁移率顶栅和双栅聚合物薄膜晶体管
DOI：
10.1063/1.3601928
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
A. Dodabalapur
中科院分区：
文献类型：
--
作者：
T. Ha;P. Sonar;A. Dodabalapur
本文介绍了由二酮基吡咯-萘共聚物构成的具有活性半导体层的顶栅和双栅薄膜晶体管(TFT)的性能特点。优化的顶栅TFT具有高达1cm2/V的迁移率和低的接触电阻和减小的空气中的磁滞。与单栅器件相比，双栅器件具有更高的驱动电流以及改进的亚阈值和高于阈值特性。我们还描述了双栅器件提高性能的原因。这种聚合物良好的稳定性和良好的电学性能相结合，使这种材料成为一种非常有希望的可印刷电子产品的半导体。
In this letter, the performance characteristics of top-gate and dual-gate thin-film transistors (TFTs) with active semiconductor layers consisting of diketopyrrolopyrrole-naphthalene copolymer are described. Optimized top-gate TFTs possess mobilities of up to 1 cm 2 /V s with low contact resistance and reduced hysteresis in air. Dual-gate devices possess higher drive currents as well as improved subthreshold and above threshold characteristics compared to single-gate devices. We also describe the reasons that dual-gate devices result in improved performance. The good stability of this polymer combined with their promising electrical properties make this material a very promising semiconductor for printable electronics.