Theory of enhancement of thermoelectric properties of materials with nanoinclusions
Theory of enhancement of thermoelectric properties of materials with nanoinclusions
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DOI：
10.1103/physrevb.77.214304
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发表时间：
2008-06-01
影响因子：
3.7
通讯作者：
Leonard, Francois
中科院分区：
文献类型：
--
作者：
Faleev, Sergey V.;Leonard, Francois
基于金属/半导体界面处的能带弯曲作为电子能量过滤器的概念，我们提出了一种增强含有金属纳米内含物的半导体材料热电性能的理论。我们发现，塞贝克系数可以显著增加，由于强烈的能量依赖的电子散射时间。通过加入声子散射，我们发现由于电子散射导致的ZT增强在高掺杂时很重要，而在低掺杂时主要是由于声子热导率的降低。
Based on the concept of band bending at metal/semiconductor interfaces as an energy filter for electrons, we present a theory for the enhancement of the thermoelectric properties of semiconductor materials with metallic nanoinclusions. We show that the Seebeck coefficient can be significantly increased due to a strongly energy-dependent electronic scattering time. By including phonon scattering, we find that the enhancement of ZT due to electron scattering is important for high doping, while at low doping it is primarily due to a decrease in the phonon thermal conductivity.