Ultraviolet photoresponse of surface acoustic wave device based on Fe-doped high-resistivity GaN
Ultraviolet photoresponse of surface acoustic wave device based on Fe-doped high-resistivity GaN
复制标题
Fe掺杂高阻GaN表面声波器件的紫外光响应
DOI：
10.7567/jjap.56.050307
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发表时间：
2017
影响因子：
1.5
通讯作者：
Wang Jianfeng
中科院分区：
文献类型：
--
作者：
Fan Yingmin;Xu Ke;Liu Zhenghui;Xu Gengzhao;Zhong Haijian;Huang Zengli;Zhang Yumin;Wang Jianfeng
研究了氢化物气相外延生长的掺铁高阻GaN外延薄膜表面声波器件的紫外光(UV)光响应特性。声表面波器件在紫外光照射下表现出很大的传输特性变化，但在停止照射后表现出很低的恢复率。通过对光电流的表征和对瑞利波的位移场的模拟，认为掺铁GaN的持久光电导是SAW器件光响应延迟的根源，宽的表面耗尽层是SAW器件具有较大光响应的原因。
The ultraviolet (UV) photoresponse of a surface acoustic wave (SAW) device fabricated on an Fe-doped high-resistivity GaN epitaxial film grown by hydride vapor phase epitaxy is investigated. The SAW device exhibits large variations in transmission characteristics under UV illumination, but shows a very low recovery rate after ceasing the illumination. Through the characterization of photocurrent and the simulation of the displacement field of Rayleigh wave, it is suggested that the persistent photoconductivity of the Fe-doped GaN is the origin of the retarded photoresponse of the SAW device, and that the wide surface depletion layer contributes to the large photoresponse of the SAW device.