On-chip fabrication of ZnO-nanowire gas sensor with high gas sensitivity
On-chip fabrication of ZnO-nanowire gas sensor with high gas sensitivity
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DOI：
10.1016/j.snb.2009.02.008
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发表时间：
2009-04-24
影响因子：
8.4
通讯作者：
Park, J. -G.
中科院分区：
文献类型：
--
作者：
Ahn, M. -W.;Park, K. -S.;Park, J. -G.
通过在图案化的Au催化剂上选择性生长纳米线，从而在两个铂柱电极之间形成纳米线气桥或纳米桥，制备了氧化锌纳米线气体传感器。纳米桥气敏元件的气敏特性在稀释的NO2中得到验证。对温度的响应在225℃时最高，在0.5-3ppm的NO2浓度范围内呈线性增加，然后呈现饱和的迹象。与氧化锌纳米晶、锡和铟掺杂的氧化锌薄膜或氧化锌纳米线等不同类型的传感器相比，我们的传感器表现出了更高的响应速度。这种增强的响应归因于纳米线/纳米线结处的势垒以及每根纳米线的表面耗尽区对传感器电阻的额外调制。此外，纳米桥结构使快速恢复行为成为可能，因为解吸的气体分子可以很容易地从氧化锌纳米线表面被扫走，而不需要重新吸附。(C)2009爱思唯尔B.V.保留所有权利。
ZnO-nanowire gas sensors were fabricated by a selective growth of nanowires on patterned Au catalysts thus forming nanowire air bridges or 'nanobridges' between two Pt pillar electrodes. The gas sensing properties of nanobridge gas sensors were demonstrated using a diluted NO2. The response, as a function of temperature, was highest at 225 degrees C and was linearly increased with the concentration of NO2 in the range of 0.5-3 ppm and then showed a sign of saturation. Our sensor showed higher response compared with different types of sensors including ZnO nanocrystals, Sn- and In-doped ZnO thin film, or ZnO nanowires. The enhanced response was attributed to the additional modulation of the sensor resistance due to potential barrier at nanowire/nanowire junctions as well as the surface depletion region of each nanowire. Also nanobridge structure enabled fast recovery behavior because desorbed gas molecules can be easily swept away from the Surface of ZnO nanowire without re-adsorption. (C) 2009 Elsevier B.V. All rights reserved.