RHEED intensity oscillations for the stoichiometric growth of SrTiO3 thin films by reactive molecular beam epitaxy
RHEED intensity oscillations for the stoichiometric growth of SrTiO3 thin films by reactive molecular beam epitaxy
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DOI：
10.1023/a:1009947517710
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发表时间：
2000-06-01
影响因子：
1.7
通讯作者：
Schlom, DG
中科院分区：
文献类型：
--
作者：
Haeni, JH;Theis, CD;Schlom, DG
反应分子束外延（MBE）生长高质量的多组分氧化物薄膜需要精确的成分控制。我们报告使用原位反射高能电子衍射（RHEED）的化学计量沉积SrTiO 3（1 0 0）从独立的锶和钛源。通过监测单层剂量的锶和钛顺序沉积时RHEED强度振荡的变化，可以将Sr：Ti比调节到化学计量的1%以内。此外，在强度振荡包络中存在拍频允许调节锶和钛通量，使得利用锶或钛的每个快门剂量获得完全单层覆盖。RHEED振荡也被用来确定掺杂浓度的钡和镧掺杂的SrTiO 3薄膜。
The growth of high quality multicomponent oxide thin films by reactive molecular beam epitaxy (MBE) requires precise composition control. We report the use of in situ reflection high-energy electron diffraction (RHEED) for the stoichiometric deposition of SrTiO3 (1 0 0) from independent strontium and titanium sources. By monitoring changes in the RHEED intensity oscillations as monolayer doses of strontium and titanium are sequentially deposited, the Sr:Ti ratio can be adjusted to within 1% of stoichiometry. Furthermore, the presence of a beat frequency in the intensity oscillation envelope allows the adjustment of the strontium and titanium fluxes so that a full monolayer of coverage is obtained with each shuttered dose of strontium or titanium. RHEED oscillations have also been employed to determine the doping concentration in barium- and lanthanum-doped SrTiO3 films.