Low-operating voltage organic field-effect transistors with high-k cross-linked cyanoethylated pullulan polymer gate dielectrics
Low-operating voltage organic field-effect transistors with high-k cross-linked cyanoethylated pullulan polymer gate dielectrics
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DOI：
10.1039/b905263a
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发表时间：
2009-01-01
影响因子：
--
通讯作者：
Rhee, Shi-Woo
中科院分区：
文献类型：
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作者：
Xu, Wentao;Rhee, Shi-Woo
研究了以高k交联氰乙基化普鲁兰（CLCEP）聚合物为栅极介质的有机场效应晶体管（ofet）的性能。优化后的自旋涂膜具有高介电常数（13.4）、高电容（53.4 nF cm(-2)，在1 MHz时）和可忽略的迟滞，可实现可靠的低电压OFET操作（-3V）。在优化的交联温度下，得到的场效应迁移率为1.32 cm(2) V-1 s(-1)，开/关电流比（Ion/Ioff）接近10(5)，阈值电压（V-th）低至-1.05 V。此外，还获得了89 mV dec（-1）的低逆亚阈值斜率（SS），接近于室温下57 mV dec（-1）的理论值。从阈值电压位移和SS值估计了陷阱状态的数量，并证实与通过FT-IR测量的OH强度有关。并研究了在CLCEP介质上生长的并五苯层的形貌和微观结构，以及与OFET器件性能的关系。
The performance of organic field-effect transistors (OFETs) with high-k cross-linked cyanoethylated pullulan (CLCEP) polymer as a gate dielectric was studied. The optimized film spin-coated from the polymer blend showed high dielectric constant (13.4), high capacitance (53.4 nF cm(-2), at 1 MHz), and negligible hysteresis enabling reliable and low-voltage OFET operations (-3V). With optimized cross-linking temperature, a field-effect mobility of 1.32 cm(2) V-1 s(-1), an on/off current ratio (Ion/Ioff) of similar to 10(5) and a threshold voltage (V-th) as low as -1.05 V were obtained. Also a low inverse subthreshold slope (SS) of 89 mV dec(-1) was obtained which is close to the theoretical value of 57 mV dec(-1) at room temperature. The number of trap states was estimated from threshold voltage shift and SS values, and was confirmed to be related to the OH intensities measured via FT-IR. The morphology and microstructure of the pentacene layer grown on CLCEP dielectrics were also investigated and correlated with OFET device performance.