High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications
High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications
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DOI：
10.1109/16.822287
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发表时间：
2000-02-01
影响因子：
3.1
通讯作者：
Wong, M
中科院分区：
文献类型：
--
作者：
Meng, ZG;Wang, MX;Wong, M
具有低温处理的金属感应横向结晶（MILC）沟道和自对准金属感应结晶（MIC）源极和漏极区域的薄膜晶体管（TFT）最近已经被证明是用于在大面积、廉价的玻璃面板上实现电子器件的潜在器件。虽然这些TFT在许多器件性能测量中优于其固相结晶对应物，但它们遭受较高的关断状态漏电流和早期漏极击穿。提出了一种新技术，采用金属诱导单边结晶（MIUC），可以从沟道区域的边缘和内部去除横向于漏极电流流动的所有主要晶界。与传统的“双边”MILC TFT相比，新的MIUC器件具有更高的场效应迁移率，显著降低的漏电流卷曲，更好的抗早期漏击穿能力，以及更好的器件参数的空间均匀性。
Thin film transistors (TFT's) with low-temperature processed metal-induced laterally crystallized (MILC) channels and self-aligned metal-induction crystallized (MIC) source and drain regions have been demonstrated recently as potential devices for realizing electronics on large-area, inexpensive glass panels. While these TFT's are better than their solid-phase crystallized counterparts in many device performance measures, they suffer from higher off-state leakage current and early drain breakdown. A new technology is proposed, employing metal-induced-unilateral crystallization (MIUC), which results in the removal from the edges of and within the channel region all major grain boundaries transverse to the drain current flow. Compared to the conventional "bilateral'' MILC TFT's, the new MIUC devices are shown to have higher field-effect mobility, significantly reduced leakage curl ent, better immunity to early drain breakdown, and much improved spatial uniformity of the device parameters.