LINEWIDTHS OF THE ELECTRONIC EXCITATION-SPECTRA OF DONORS IN SILICON
LINEWIDTHS OF THE ELECTRONIC EXCITATION-SPECTRA OF DONORS IN SILICON
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DOI：
10.1103/physrevb.23.2082
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发表时间：
1981-01-01
影响因子：
3.7
通讯作者：
RAMDAS, AK
中科院分区：
文献类型：
--
作者：
JAGANNATH, C;GRABOWSKI, ZW;RAMDAS, AK
在高分辨傅里叶变换光谱仪下研究了硅中磷、砷、孤立间隙锂和锂氧施主的激发光谱。使用“无应变”安装技术，观察到的线宽要窄得多，比那些在文献中较早报道的，观察到的线宽似乎是有限的“寿命”的影响。研究了硅中磷施主的激发线的线宽和形状，这些激发线是由Si 30通过捕获慢中子然后进行β−衰变而核嬗变为P 31而引入的;中子辐照产生的带电缺陷的影响被证明并根据带电杂质和缺陷产生的电场来解释。
The excitation spectra of phosphorus, arsenic, isolated interstitial lithium, and lithium oxygen donors in silicon have been investigated under the high resolution of a Fourier-transform spectrometer. Using a" strain-free" mounting technique, the linewidths are observed to be much narrower than those reported earlier in the literature; the observed linewidths appear to be limited by the" lifetime" effects. The linewidths and shapes of the excitation lines of phosphorus donors in silicon, introduced by the nuclear transmutation of Si 30 into P 31 by the capture of a slow neutron followed by a β− decay, are studied; the influence of the charged defects produced by neutron irradiation is demonstrated and explained in terms of the electric fields due to charged impurities and defects.