Thermoelectric properties of p-type half-Heusler compound HfPtSn and improvement for high-performance by Ir and Co additions
Thermoelectric properties of p-type half-Heusler compound HfPtSn and improvement for high-performance by Ir and Co additions
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DOI：
10.1063/1.2364721
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发表时间：
2006-10-23
影响因子：
4
通讯作者：
Zama, Akihisa
中科院分区：
文献类型：
--
作者：
Kimura, Yoshisato;Zama, Akihisa
作者发现，半赫斯勒化合物HfPtSn表现出p型热电行为，与HfNiSn对应物相反，具有相同的价电子数18，表现出n型行为。采用光学浮区熔法制备了近单晶的HfPtSn。HfPtSn显示出大的热电功率，而其电阻率和热导率相对较高。他们通过在Pt位添加Ir和Co来改善HfPtSn的p型热电性能。其目的不仅在于优化载流子浓度，而且还在于通过固溶体效应减少晶格贡献来抑制热传导的增加。(c)2006年，美国物理学会。
The authors found that the half-Heusler compound HfPtSn exhibits p-type thermoelectric behavior, contrary to the HfNiSn counterpart with the same valence electron count of 18 showing n-type behavior. Nearly single crystals of HfPtSn were fabricated using optical floating zone melting method. HfPtSn shows large thermoelectric power while its electrical resistivity and thermal conductivity are relatively high. They improved p-type thermoelectric properties of HfPtSn by the additions of Ir and Co for the Pt site. It aims not only to optimize carrier concentrations but also to suppress an increase in thermal conduction by reducing the lattice contribution through the solid solution effects. (c) 2006 American Institute of Physics.