Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy
Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy
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分子束外延形成的 GaAs (111)B 面的表面光滑度和台阶聚束
DOI：
10.1143/jjap.35.4038
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发表时间：
1996
影响因子：
1.5
通讯作者：
H. Sakaki
中科院分区：
文献类型：
--
作者：
Y. Nakamura;I. Tanaka;N. Takeuchi;S. Koshiba;H. Noge;H. Sakaki
用原子力显微镜研究了在台面（001）衬底上用分子束外延生长的GaAs梯形结构（111）B面的形貌。结果表明，在端面上出现了高度为1-4 nm的多原子台阶，典型周期为30-60 nm。当台面条纹相对于[110]的取向差角Δθ从2°增加到7°时，台面条纹的高度Δ单调增加。因此，必须最小化错误取向角Δθ以形成平滑的刻面结构。
GaAs trapezoidal structures grown by molecular beam epitaxy on mesa-patterned (001) substrates have been studied by atomic force microscopy to clarify the morphology of (111)B facet planes. It is found that multi-atomic steps of 1–4 nm in height Δ appear on the facets with typical periods Λ of 30–60 nm. When the mis-orientation angle Δθ of mesa-stripes with respect to [110] increases from 2° to 7°, the corrugation height Δ is found to increase monotonically. Thus the mis-orientation angle Δθ must be minimized to form smooth facet structures.