Synthesis and Characterization of Ge-Doped GaN Crystalline Powders Deposited on Graphite and Silica Glass Substrates
Synthesis and Characterization of Ge-Doped GaN Crystalline Powders Deposited on Graphite and Silica Glass Substrates
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DOI：
10.1021/cg068014p
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发表时间：
2007-05
影响因子：
3.8
通讯作者：
S. Shimada;and Yoko Miura;A. Miura;T. Sekiguchi
中科院分区：
文献类型：
--
作者：
S. Shimada;and Yoko Miura;A. Miura;T. Sekiguchi
在1000 ° C和1180 °C下，通过NH3与气态Ga2O和GeO（分别由碳与Ga2O3和GeO2反应产生）的1小时反应，在石墨和石英玻璃衬底上沉积掺杂有不同量的Ge的氮化镓（GaN）粉末。采用X射线衍射（XRD）和拉曼光谱（Raman）对GaN粉体的结晶度进行了表征，并采用扫描电子显微镜（SEM）对其形貌进行了观察。在室温下通过阴极发光（CL）测量粉末的发光以评价GaN晶体的质量。根据XRD、拉曼光谱和化学发光测试结果，讨论了Ge掺杂对GaN粉体的结晶度、形貌和发光性能的影响。结果表明，Ge掺杂的GaN晶体表现出非常高的CL强度，伴随着在430 nm处的缺陷相关的发射的消除。
Gallium nitride (GaN) powders doped with various amounts of Ge were deposited at 1000 and 1180 °C on graphite and silica glass substrates by a 1-h reaction of NH3 with gaseous Ga2O and GeO, produced by the reaction of carbon with Ga2O3 and GeO2, respectively. The crystallinity of the GaN powders was determined by X-ray diffraction (XRD) and Raman spectroscopy, and their morphology was observed by scanning electron microscopy. The luminescence of the powders was measured at room temperature by cathodoluminescence (CL) to evaluate the quality of the GaN crystals. The influence of Ge-doping of the GaN powders on their crystallinity, morphology, and luminescence is discussed on the basis of the XRD, Raman spectroscopy, and CL results. It is shown that Ge-doped GaN crystals exhibit very high CL intensities accompanied by the elimination of defect-related emission at 430 nm.