Electronic transport transition at graphene/YBa2Cu3O7−δ junction
Electronic transport transition at graphene/YBa2Cu3O7−δ junction
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DOI：
10.1063/1.4868118
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发表时间：
2014-03
影响因子：
4
通讯作者：
Q. J. Sun;H. Wang;Haomin Wang;L. Deng;Z. Hu;B. Gao;Qian Li;Xiaoming Xie
中科院分区：
文献类型：
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作者：
Q. J. Sun;H. Wang;Haomin Wang;L. Deng;Z. Hu;B. Gao;Qian Li;Xiaoming Xie
我们报道了石墨烯/YBa2Cu3O7−δ触点的制备及其超导邻近效应。分别研究了触点电阻的温度依赖性和电流偏置依赖性。结果与纯YBCO霍尔棒进行了比较。在YBCO的转变温度下，石墨烯/YBCO结的微分电阻在高偏置下从非零值转变为零，这表明库珀对从YBCO向石墨烯隧穿。由于脉冲激光沉积的YBCO薄膜表面粗糙，石墨烯层可以与CuO2平面的边缘接触。它允许库珀对沿着CuO2平面泄漏到石墨烯中。
We report the fabrication of graphene/YBa2Cu3O7−δ contacts and their superconducting proximity effect. Both the temperature dependence of resistance and the current bias dependence of resistance for the contacts are investigated, respectively. The results are compared with that of pure YBCO Hall bar. It is found that the differential resistance transits from a non-zero value to zero at high bias across graphene/YBCO junction below the transition temperature of YBCO, the phenomena indicate the tunneling of Cooper pairs from YBCO to graphene. As the YBCO film deposited by pulsed laser deposition has a rough surface, the graphene layer can contact with the edge of CuO2 planes. It allows that Cooper pairs could leak into graphene along the CuO2 planes.