Observation of Carrier Behavior in Organic Field-Effect Transistors with Electroluminescence under AC Electric Field
Observation of Carrier Behavior in Organic Field-Effect Transistors with Electroluminescence under AC Electric Field
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DOI：
10.1143/jjap.47.3200
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发表时间：
2008-04
影响因子：
1.5
通讯作者：
Y. Ohshima;H. Kohn;E. Lim;T. Manaka;M. Iwamoto
中科院分区：
文献类型：
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作者：
Y. Ohshima;H. Kohn;E. Lim;T. Manaka;M. Iwamoto
利用有机场效应晶体管结构的电致发光（EL）研究了并四苯薄膜在交流电场下的载流子行为。将方波电压施加到源电极，而漏电极和栅电极接地。电子和空穴从Au源电极交替注入，并且它们在并四苯薄膜和源电极之间的界面处复合。根据所施加的AC电压观察到一系列EL脉冲，即，在AC的半个周期中观察到瞬态EL。该结果表明，交替载流子注入导致EL。电致发光强度随交流电压的频率和幅值的增大而增大。研究表明，单位时间内从源极注入的电子和空穴的数量受交流电压的频率和幅值的控制。
The carrier behavior in a tetracene thin film under AC electric field was examined by electroluminescence (EL) using the structure of organic field-effect transistors (OFETs). A square wave voltage was applied to the source electrode, whereas the drain and gate electrodes were connected to the ground. Electrons and holes were injected from the Au source electrode alternately, and they recombined at the interface between the tetracene thin film and the source electrode. A series of EL pulses was observed in accordance with the applied AC voltage, i.e., a transient EL was observed in a half cycle of AC. This result indicates that alternating carrier injection causes EL. Furthermore, EL intensity increased with the frequency and amplitude of AC voltage. It was suggested that the amount of electrons and holes injected from the source electrode in a unit time is controlled by the frequency and amplitude of AC voltage.