Vanadium-doped molybdenum disulfide film-based strain sensors with high gauge factor
Vanadium-doped molybdenum disulfide film-based strain sensors with high gauge factor
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DOI：
10.7567/1882-0786/aaf5c4
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发表时间：
2019-01
影响因子：
2.3
通讯作者：
Minjie Zhu;Jinhua Li;N. Inomata;M. Toda;T. Ono
中科院分区：
文献类型：
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作者：
Minjie Zhu;Jinhua Li;N. Inomata;M. Toda;T. Ono
本文报道了基于溅射Mo薄膜硫化的二维材料V掺杂MoS 2薄膜的压阻性能。I-V特性表明V原子掺杂确实降低了MoS 2的电阻率。制作了基于V掺杂MoS 2电阻元件的应变传感器。通过使用四点弯曲法，在压缩和拉伸应变条件下获得了140的规范因子（GF）。研究了不同溅射条件下V掺杂MoS 2的压阻效应。发现引入V原子作为掺杂剂的掺杂方法对提高压阻性能起着重要作用。
This paper reports the piezoresistive performance of the two-dimensional (2D) material of vanadium (V)-doped molybdenum disulfide (MoS2) films based on sulfurization of sputtered Mo thin films. I–V characteristics indicate that V atom doping indeed decreases the resistivity of MoS2. Strain sensors based on V-doped MoS2 resistive elements were fabricated. By using a four-point bending method, a gauge factor (GF) of 140 under compressive and tensile strain conditions was obtained. The piezoresistive effect of V-doped MoS2 with different V sputtering conditions was also investigated. The doping method introducing V atoms as dopants is found to play an important role in enhancing piezoresistive performance.