LLR-Distribution-Based Non-Uniform Quantization for RBI-MSD Algorithm in MLC Flash Memory
LLR-Distribution-Based Non-Uniform Quantization for RBI-MSD Algorithm in MLC Flash Memory
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MLC闪存中基于LLR分布的RBI-MSD非均匀量化算法
DOI：
10.1109/lcomm.2017.2755023
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Liu Wenjie
中科院分区：
文献类型：
--
作者：
Ouyang Sijie;Han Guojun;Fang Yi;Liu Wenjie
Multi-level cell (MLC) technique has been widely used to improve the storage capacity of NAND flash memory at the price of sacrificing some storage reliability. As a type of excellent error-correction codes, low-density parity-check (LDPC) codes can significantly enhance the performance of flash memory. However, the conventional decoding algorithms for LDPC codes suffer from the drawback of high complexity. To address this problem, we propose a serial reliability-based iterative min-sum decoding (RBI-MSD) algorithm for LDPC-coded MLC flash memory systems to strike a desirable trade-off between the performance and complexity. Furthermore, we conceive a novel log-likelihood-ratio (LLR)-distribution-based non-uniform quantization method for the RBI-MSD algorithm. Unlike conventional quantization methods, the proposed non-uniform quantization method substantially exploits the distribution characteristics of channel initial LLRs in MLC flash memory. Simulation results indicate that the proposed non-uniform quantization method not only exhibits more excellent error performance than the conventional non-uniform and uniform counterparts, but also is applicable to other RBI decoding algorithms.
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