Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes
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DOI：
10.1016/j.physb.2017.09.125
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发表时间：
2017-12
影响因子：
2.8
通讯作者：
C. Dong;Xiuxun Han;Jian Li;Xin Gao;Y. Ohshita
中科院分区：
文献类型：
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作者：
C. Dong;Xiuxun Han;Jian Li;Xin Gao;Y. Ohshita
