Threshold voltage shift and formation of charge traps induced by light irradiation during the fabrication of organic light-emitting diodes
Threshold voltage shift and formation of charge traps induced by light irradiation during the fabrication of organic light-emitting diodes
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DOI：
10.1063/1.2936084
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发表时间：
2008-05
影响因子：
4
通讯作者：
Y. Noguchi;N. Sato;Yuya Tanaka;Y. Nakayama;H. Ishii
中科院分区：
文献类型：
--
作者：
Y. Noguchi;N. Sato;Yuya Tanaka;Y. Nakayama;H. Ishii
采用位移电流法研究了环境光对氧化铟锡/4，4 ′-双[N-（1-萘基）-N-苯胺基]联苯（α-NPD）/三-（8-羟基喹啉）铝（Alq 3）scinAl有机电致发光二极管（OLED）器件性能的影响。光照射引起空穴注入的阈值电压的偏移，并导致在Alq 3层中形成电荷陷阱。电压偏移意味着α-NPD scinAlq 3界面处的电荷密度降低。界面电荷的来源可以归因于Alq 3层中的偶极矩有序。
We examined the effects of ambient light on the device properties of an organic light-emitting diode, indium tin oxide/4,4′-bis[N-(1-naphthyl)-N-phenylamino]-biphenyl (α-NPD)/tris-(8-hydroxyquinolate) aluminum (Alq3)∕Al, during fabrication using displacement current measurement. Light irradiation induces a shift in the threshold voltage for hole injection and results in the formation of charge traps in the Alq3 layer. The voltage shift implies a reduction in charge density at the α-NPD∕Alq3 interface. The origin of the interfacial charge can be attributed to dipole moment ordering in the Alq3 layer.