Third and fourth optical transitions in semiconducting carbon nanotubes
Third and fourth optical transitions in semiconducting carbon nanotubes
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DOI：
10.1103/physrevlett.98.067401
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发表时间：
2007-02-09
影响因子：
8.6
通讯作者：
Jorio, Ado
中科院分区：
文献类型：
--
作者：
Araujo, Paulo T.;Doorn, Stephen K.;Jorio, Ado
我们利用径向呼吸模式拉曼光谱研究了单壁碳纳米管在宽直径（0.7-2.3 nm）和能量（1.26-2.71 eV）范围内的光学跃迁能量。我们建立了半导体管中研究较少的第三和第四光学跃迁的直径和手性角依赖性。较高位置的过渡区与第一和第二过渡区之间的比较分析显示出两种不同的直径比例。量子力学计算解释了第一和第二跃迁中强束缚激子以及第三跃迁中离域电子波函数的结果。
We have studied the optical transition energies of single-wall carbon nanotubes over broad diameter (0.7-2.3 nm) and energy (1.26-2.71 eV) ranges, using their radial breathing mode Raman spectra. We establish the diameter and chiral angle dependence of the poorly studied third and fourth optical transitions in semiconducting tubes. Comparative analysis between the higher lying transitions and the first and second transitions show two different diameter scalings. Quantum mechanical calculations explain the result showing strongly bound excitons in the first and second transitions and a delocalized electron wave function in the third transition.