Magnetoresistance Characterization of NiFe Films With a Planar Point Contact
Magnetoresistance Characterization of NiFe Films With a Planar Point Contact
复制标题
平面点接触 NiFe 薄膜的磁阻表征
DOI：
10.1109/tmag.2007.892179
复制
发表时间：
2007
影响因子：
2.1
通讯作者：
Y. Ohsawa
中科院分区：
文献类型：
--
作者：
Y. Ohsawa
NiFe薄膜的磁阻（MR）表征是通过离子铣削工艺进行的，其尺寸从几百到大约10nm2不等。通过对R-H曲线的解析分解，观察到两种MR源，分别为畴壁MR （DWMR）和各向异性MR （AMR）。由于发生区域的不同，MRs表现出对PC电导的对比依赖性。PC中的DWMR随PC尺寸的减小而增大，最大可达12.5%左右。DWMR对NiFe-PC尺寸的依赖与基于先前一些报告的拟合近似一致
Magnetoresistance (MR) characterization of NiFe films was performed with a point-contact (PC) whose size was varied from several hundreds to around ten nm2 by the ion milling process. Two kinds of MR origin, which were estimated to be domain wall MR (DWMR) and anisotropic MR (AMR), were observed by analytical decomposition of the R-H curves. The MRs showed contrastive dependence on the PC conductance due to difference of area in which they occurred. The DWMR in the PC increased as the PC size decreased and reached to a maximum of about 12.5%. The DWMR dependence on the NiFe-PC size coincided with that of fitting approximation based on some previous reports