Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate
Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate
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DOI：
10.3390/photonics2020646
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发表时间：
2015-06
期刊：
影响因子：
2.4
通讯作者：
Siming Chen;M. Tang;Jiang Wu;Q. Jiang;V. Dorogan;M. Benamara;Y. Mazur;G. Salamo;Huiyun Liu
中科院分区：
文献类型：
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作者：
Siming Chen;M. Tang;Jiang Wu;Q. Jiang;V. Dorogan;M. Benamara;Y. Mazur;G. Salamo;Huiyun Liu
III-V发光源在Si衬底上的直接集成已经引起了对于解决Si基电子器件的日益增长的限制以及允许实现复杂光电子电路的显著兴趣。然而，由III-V族材料和Si衬底之间的大的晶格失配和不相容的热膨胀系数引入的高密度的穿透位错从根本上限制了III-V族器件在Si衬底上的单片外延。在这里，通过使用InAlAs/GaAs应变层超晶格（SLS）作为位错过滤层（DFL）来降低穿透位错的密度。我们首次展示了Si基1.3 μm InAs/GaAs量子点（QD）激光器，其激光输出温度高达111 °C，在室温下具有200 A/cm 2的低阈值电流密度和超过100 mW的高输出功率。然后，我们展示了操作的InAs/GaAs量子点超辐射发光二极管（SLDs）单片生长在Si衬底上。在室温下，两段式半导体激光器的3dB线宽为114 nm，中心波长为1255 nm，输出功率为2.6mW。我们的工作补充了使用晶圆键合的混合集成，并代表了在Si衬底上直接单片集成III-V发光体的重要里程碑。
Direct integration of III–V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III–V materials and Si substrates have fundamentally limited monolithic epitaxy of III–V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs) as dislocation filter layers (DFLs) to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 µm InAs/GaAs quantum dot (QD) laser that lases up to 111 °C, with a low threshold current density of 200 A/cm2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs) monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ～1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III–V light emitters on Si substrates.