Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field
Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field
复制标题
通过层间距离和垂直电场对 GaTe/石墨烯异质结构进行肖特基势垒调制
DOI：
10.1088/1361-6528/ab2d67
复制
发表时间：
2019-10-04
期刊：
影响因子：
3.5
通讯作者：
Wang, Haiying
中科院分区：
文献类型：
--
作者：
Li, Hengheng;Zhou, Zhongpo;Wang, Haiying
二维材料近来已成为广泛研究的焦点。基于石墨烯的垂直货车德瓦尔斯异质结构有望设计和制造新型的电子和光电子器件。单层碲化镓是实验室合成的一种石墨烯类纳米片。本文研究了在层间耦合和外加垂直电场作用下GaTe/石墨烯异质结构的电子性质。结果表明，在GaTe/石墨烯异质结构中，GaTe和石墨烯的电子性质得到了保持，石墨烯的能带隙被打开到13.5 meV。结果表明，在GaTe/石墨烯异质结构中形成了n型肖特基接触，这种肖特基接触可以通过层间耦合和外加电场来调节。此外，当层间距离小于3.15 μ m或外加电场大于0.05 V Ω-1时，观察到从n型到p型肖特基接触的转变。这些特性是基于GaTe/石墨烯异质结构的新型肖特基纳米器件设计的基础。
Two-dimensional materials have recently been the focus of extensive research. Graphene-based vertical van der Waals heterostructures are expected to design and fabricate novel electronic and optoelectronic devices. Monolayer gallium telluride is a graphene-like nanosheet synthesized in experiment. Here, the electronic properties of GaTe/graphene heterostructures are investigated under the interlayer coupling and the applied perpendicular electric field. The results show that the electronic properties of GaTe and graphene are preserved, and the energy bandgap of graphene is opened to 13.5 meV in the GaTe/graphene heterostructure. It is found that the n-type Schottky contact is formed in the GaTe/graphene heterostructure, which can be tuned by the interlayer coupling, and the applied electric field. Moreover, a transformation from n-type to p-type Schottky contact is observed when the interlayer distance is smaller than 3.15 Å or the applied electric field is larger than 0.05 V Å−1. These properties are fundamental to the design of new Schottky nanodevices based on the GaTe/graphene heterostructure.