Microstructure and nonbasal-plane growth of epitaxial Ti2AlN thin films
Microstructure and nonbasal-plane growth of epitaxial Ti2AlN thin films
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DOI：
10.1063/1.2161943
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发表时间：
2006-02
影响因子：
3.2
通讯作者：
M. Beckers;N. Schell;R. Martins;A. Mücklich;W. Möller;L. Hultman
中科院分区：
文献类型：
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作者：
M. Beckers;N. Schell;R. Martins;A. Mücklich;W. Möller;L. Hultman
Thin films of the Mn+1AXn (MAX) phase (M: early transition metal, A:A-group element, X: C and/or N, n=1-3) Ti2AlN were epitaxially grown onto single-crystal MgO(111) and MgO(100) substrates by dc r ...
