Characterization of exposure and processing of thick PMMA for deep x-ray lithography using hard x-rays
Characterization of exposure and processing of thick PMMA for deep x-ray lithography using hard x-rays
复制标题
使用硬 X 射线表征用于深 X 射线光刻的厚 PMMA 的曝光和加工
DOI：
10.1007/s005420050102
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
J. Song
中科院分区：
文献类型：
--
作者：
F. Carlo;D. Mancini;B. Lai;J. Song
使用深X射线光刻（DXRL）制造微结构的第一步是通过硬X射线辐射敏感聚合物如聚（甲基丙烯酸甲酯）（PMMA）。在高级光子源中，专用光束线1允许对非常厚的抗蚀剂（几毫米）进行适当曝光。在这项工作中，我们给出了一个表征的PMMA/开发系统。计算了不同显影液中曝光PMMA的抗蚀剂溶解速率（μm/min）。我们还分析了厚曝光抗蚀剂中产生气泡和裂纹的条件，并研究了减少气泡和裂纹的扫描参数。
The first step for the fabrication of microstructures using deep x-ray lithography (DXRL) is the radiation of a sensitive polymer like poly(methyl methacrylate) (PMMA) by hard x-ray. At the Advanced Photon Source a dedicated beamline1allowed the proper exposure of very thick resist (several mm). In this work we give a characterization of the PMMA/development system. As a result the resist dissolution rate (μm/min) of the exposed PMMA in different developer is calculated. We also analyze the conditions that produce bubbles and cracks in the thick exposed resist and investigate the scanning parameters that reduce them.