Active site formation in the direct process for methylchlorosilanes
Active site formation in the direct process for methylchlorosilanes
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DOI：
10.1016/0021-9517(86)90268-x
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发表时间：
1986-10
影响因子：
7.3
通讯作者：
W. Banholzer;N. Lewis;W. Ward
中科院分区：
文献类型：
--
作者：
W. Banholzer;N. Lewis;W. Ward
在实验室规模的流化床反应器中研究了甲基氯硅烷的直接生产工艺。人们发现硅具有产生硅烷的离散位点。位点的密度由硅上的原生氧化层的性质控制。活性位点显示出规则的几何形状，表明各向异性硅反应随着反应的进行优先使（111）面暴露。 200 Å 厚的碳和 SiO2 层可防止活性位点的形成。
The direct process for methylchlorosilane production was studied in a laboratory-scale fluidized bed reactor. The silicon was found to have discrete sites at which silanes were produced. The density of sites was controlled by the nature of the native oxide layer over the silicon. The active sites displayed regular geometry, indicating an anisotropic silicon reaction which preferentially leaves (111) planes exposed as the reaction proceeded. Carbon and SiO2layers 200 Å thick prevented active site formation.