Higher-order structure and thermal transition behaviour of poly(di-–hexylsilane)

Higher-order structure and thermal transition behaviour of poly(di-–hexylsilane)
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聚二己基硅烷的高阶结构和热转变行为

DOI:
10.1016/0032-3861(95)93589-e
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发表时间:
1995
期刊:
影响因子:
--
通讯作者:
K. Ueno
K. Ueno
中科院分区:
--
文献类型:
--
作者:
Hiroko Kyotani;Masaki Shimomura;M. Miyazaki;K. Ueno

文献摘要

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通过 X 射线衍射、差示扫描量热法、紫外可见分光光度法研究了在不同条件下用甲苯溶液浇铸的聚(二己基硅烷)(PDHS)薄膜。光谱学和荧光光谱学。讨论了流延薄膜的高阶结构与其相变的关系。在 2°C 下缓慢干燥的薄膜(薄膜 a)、在室温下快速干燥的薄膜(薄膜 b)和在 36°C 下缓慢干燥的薄膜(薄膜 c 和 d)分别具有低、中和高度结晶结构。在薄膜c中,斜方晶胞的(110)面平行于薄膜表面取向。紫外线由于有序相而产生的最大吸收在 357 nm(膜 a)、370 nm(膜 b)和 375 nm(膜 c)附近观察到。在 350 nm 和 389 nm 之间观察到荧光光谱的峰值。 d.s.c.观察到相变的峰值温度为 36–49°C。
Poly(di-–hexylsilane)(PDHS) films cast at various conditions from toluene solutions were studied by X-ray diffraction, d.s.c., u.v.-vis. spectroscopy and fluorescence spectroscopy. The higher-order structure of cast films is discussed in relation to their phase transitions. Films dried slowly at 2°C (film a), quickly at room temperature (film b) and slowly at 36°C (films c and d) have low, moderate and highly crystalline structures, respectively. In thin film c, the (110) plane of the orthorhombic unit cell is oriented parallel to the film surface. The u.v. absorption maxima due to the ordered phase were observed around 357 nm (film a), 370 nm (film b) and 375 nm (film c). The peaks in the fluorescence spectra were observed between 350 nm and 389 nm. The d.s.c. peak temperature for phase transition was observed at 36–49°C.