High-k HfO2-Based AlGaN/GaN MIS-HEMTs With Y2O3 Interfacial Layer for High Gate Controllability and Interface Quality
High-k HfO2-Based AlGaN/GaN MIS-HEMTs With Y2O3 Interfacial Layer for High Gate Controllability and Interface Quality
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DOI：
10.1109/jeds.2019.2956844
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发表时间：
2020-01-01
影响因子：
2.3
通讯作者：
Lu, Hai
中科院分区：
文献类型：
--
作者：
Shi, Ya-Ting;Xu, Wei-Zong;Lu, Hai
在硅基mosfet中广泛采用高钾HfO2作为栅极介质，以更好地控制栅极泄漏和沟道静电。然而，在AlGaN/GaN hemt中，附加的界面问题以及HfO2的高氧透明度阻碍了其实际应用。在本工作中，引入了具有超低氧渗透率和高热力学鲁棒性的高k Y2O3作为HfO2/GaN之间的界面层，用于界面工程。结果表明，HfO2/Y2O3栅极介电堆获得了GaN MIS-HEMT的超低亚阈值摆幅，约为70 mV/decade，极低的栅极漏率约为10(-1)2a /mm，具有理想的介电/半导体界面质量，界面态密度约为1012 cm(-2)eV（-1）。同时，最大漏极电流为600mA/mm，导通状态电阻（Ron）为10.7，与中心点mm相似，特定Ron为2.62 m ω中心点cm(2)。
High-k HfO2 has been widely adopted in Si based MOSFETs as gate dielectric for the superior control over gate leakage and channel electrostatics. However, in AlGaN/GaN HEMTs, the additional interface issue as well as high oxygen transparency of HfO2 has hindered its practical applications. In this work, high-k Y2O3 with ultra-low oxygen permeability and high thermodynamic robustness has been introduced as the interfacial layer between HfO2/GaN for the interface engineering. It has been demonstrated that, the HfO2/Y2O3 gate dielectric stacks have obtained the GaN MIS-HEMT an ultra-small subthreshold swing of similar to 70 mV/decade, an extremely low gate leakage of similar to 10(-1)2 A/mm, and a desirable dielectric/semiconductor interface quality with interface state density in level of similar to 1012 cm(-2)eV(-1). Meanwhile, a maximum drain current of 600mA/mm has been achieved together with an on-state resistance (Ron) of 10.7 similar to center dot mm and a specific Ron of 2.62 m Omega center dot cm(2).