Thermal conductivity measurements of thin-film resist
Thermal conductivity measurements of thin-film resist
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DOI：
10.1116/1.1421557
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发表时间：
2001-12
影响因子：
1.4
通讯作者：
Dachen Chua;M. Touzelbaev;K. Goodson;Sergey Babinb
中科院分区：
文献类型：
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作者：
Dachen Chua;M. Touzelbaev;K. Goodson;Sergey Babinb
在电子束和光刻中，局部加热可以改变抗蚀剂的灵敏度，并导致显著的临界尺寸的变化。现有的模型缺乏聚合物抗蚀剂膜的热性能的实验数据。我们提出的测量薄抗蚀剂膜的面外和面内热导率以下不同的曝光条件。使用光学热反射技术来表征面外热导率;暴露的SPR™-700抗蚀剂的面外热导率作为暴露剂量的函数而增加。我们还设计和制造了一个独立的微电极结构，用于测量面内热导率和聚（甲基丙烯酸甲酯）薄膜的结果，表明，不同于聚酰亚胺薄膜，没有明显的各向异性行为。
In electron-beam and photolithography, local heating can change the resist sensitivity and lead to variations in significant critical dimension. Existing models suffer from the lack of experimental data for the thermal properties of the polymer resist films. We present the measurements of both out-of-plane and in-plane thermal conductivity of thin resist films following different exposure conditions. An optical thermoreflectance technique was used to characterize out-of-plane thermal conductivity; the out-of-plane thermal conductivity of exposed SPR™-700 resist increases as a function of exposure dose. We also designed and fabricated a free-standing micro-electrode structure for measuring the in-plane thermal conductivity and results for poly(methylmethacrylate) films were obtained, indicating that, unlike polyimide films, there is no appreciable anisotropic behavior.