Improvement of electrical characterisutics of local BOX MOSFETs by heavily doped structures and eludiation of the related mechanism
Improvement of electrical characterisutics of local BOX MOSFETs by heavily doped structures and eludiation of the related mechanism
复制标题
重掺杂结构改善局域BOX MOSFET电特性及相关机制的探讨
DOI：
10.1007/s10825-013-0549-5
复制
发表时间：
2013
影响因子：
2.1
通讯作者：
Y.Nakajima,T.Hanajiri,T.Toyabe and T.Sugano
中科院分区：
文献类型：
--
作者：
T.Yamada;Y.Nakajima,T.Hanajiri,T.Toyabe and T.Sugano
我们提出了重掺杂绝缘体间硅MOSFET(HDSBI)MOSFET，通过使用简单的结构将局部盒区域和额外的掺杂区相结合来改善局域盒MOSFET的电学特性。HDSBI MOSFET在局部箱区之间有重掺杂区，在箱区中引入受主或陷阱。模拟电学特性表明，它们能有效地抑制局域盒型MOSFET的自热效应和扭结效应，并抑制自热效应。我们解释了HDSBI MOSFET中额外的掺杂区是如何抑制SCE和扭结效应的。我们得出的结论是，HDSBI MOSFET适合应用于集成了短沟道逻辑电路和高驱动电流电路的多用途片上系统。
We proposed heavily doped silicon between insulators (HDSBI) MOSFETs to improve electrical characteristics of local BOX MOSFETs by using simple structures that combine local BOX regions with additional doped regions. HDSBI MOSFETs have heavily doped regions between local BOX regions, in which acceptors or traps are introduced. Simulated electrical characteristics demonstrated that they can suppress the SCEs and the kink effect, as well as the self-heating effect (SHE), which is suppressed by conventional local BOX MOSFETs. We elucidated how the additional doped regions in HDSBI MOSFETs suppress the SCEs and the kink effect. We concluded that HDSBI MOSFETs are suitable for applications, such as multi-purpose system-on-chip on which both short-channel logic circuits and high drive current circuits are integrated.