Tuning of threshold voltage of organic field-effect transistors by space charge polarization
Tuning of threshold voltage of organic field-effect transistors by space charge polarization
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DOI：
10.1063/1.3086277
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发表时间：
2009-02-16
影响因子：
4
通讯作者：
Murata, Hideyuki
中科院分区：
文献类型：
--
作者：
Sakai, Heisuke;Konno, Koudai;Murata, Hideyuki
我们展示了一种使用离子分散栅电介质的有机场效应晶体管(OFET)中的可调阈值电压。通过在栅电介质上施加外加电场(V(Ex))，栅电介质中分散的离子通过电泳法分离，形成空间电荷极化。漏极电流增加了1.9倍以上，阈值电压(V(Th))降低了22V(从-35.1 V降至-13.1 V)。V(Th)位移的方向和大小可随施加的V(Ex)而调节。V(Th)漂移的原因归因于栅电介质的极化。
We demonstrate a tunable threshold voltage in an organic field-effect transistor (OFET) using an ion-dispersed gate dielectric. By applying an external electric field (V(ex)) to the gate dielectrics, the dispersed ions in the gate dielectric are separated by electrophoresis and form space charge polarization. The drain current of the OFET increases more than 1.9 times, and the threshold voltage (V(th)) decreases by 22 V (from -35.1 to -13.1 V). The direction and the magnitude of V(th) shift are tunable with the applied V(ex). The origin of the V(th) shift is attributed to the polarization of the gate dielectric.