Improved reliability of NO-nitrided SiO2 grown on p-type 4H-SiC
Improved reliability of NO-nitrided SiO2 grown on p-type 4H-SiC
复制标题
提高在 p 型 4H-SiC 上生长的 NO 氮化 SiO2 的可靠性
DOI：
10.1109/55.704399
复制
发表时间：
1998
影响因子：
4.9
通讯作者：
H. B. Harrison
中科院分区：
文献类型：
--
作者：
Hui;S. Dimitrijev;H. B. Harrison
这封信表明，在p型4 H-SiC上生长的氧化物的可靠性可以显着提高NO氮化。采用高场（~ 8 MV/cm）室温应力和高温负偏压（250/spl deg/C，~ 4 MV/cm）测试来研究NO氮氧化物的可靠性。相对较小的变化，在平带电压，界面陷阱密度和漏电流观察5000 s后的情况下，NO的氮化氧化物，而较短的应力转移这些参数显着的情况下，N退火的对照样品。
This letter demonstrates that the reliability of oxides grown on p-type 4H-SiC can be dramatically improved by NO nitridation. High field (-8 Mv/cm) room-temperature stressing and high-temperature negative-bias (250/spl deg/C, -4 MV/cm) testing were used to investigate the reliability of NO nitrided oxides. Relatively small changes in the flat-band voltage, interface-trap density and leakage current were observed after 5000 s in the case of NO nitrided oxides, while shorter stressing shifted these parameters dramatically in the case of N annealed control samples.