Crystallization in amorphous silicon
Crystallization in amorphous silicon
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非晶硅的结晶
DOI：
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发表时间：
1979
期刊：
影响因子：
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通讯作者：
P. Thomas
中科院分区：
文献类型：
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作者：
K. Zellama;P. Germain;S. Squelard;J. Bourgoin;P. Thomas
研究了蒸发法制备的非晶硅层的结晶过程。晶体分数是从电导率测量中推断出来的。根据蒸发条件的不同，观察到均匀或非均匀成核，并在表面或体中诱导结晶。通过在不同温度下测得的结晶动力学，得到结晶生长速率和成核速率随温度的变化规律。结果允许人们为表征结晶的热力学参数提供数量级。
Crystallization has been studied in amorphous silicon layers produced by evaporation. The crystalline fraction is deduced from conductivity measurements. Depending upon the conditions of evaporation homogeneous or heterogeneous nucleation is observed and the crystallization is induced at the surface or in the bulk. The variations with temperature of the growth rate of crystallization and of the nucleation rate are obtained from the kinetics of the crystallization measured at various temperatures. The results allow one to provide orders of magnitude for the thermodynamical parameters which characterize the crystallization.