1.2 [micro sign]m range GaInAs SQW lasers using Sb as surfactant
1.2 [micro sign]m range GaInAs SQW lasers using Sb as surfactant
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1.2 [微标志]米范围GaInAs SQW激光器，使用Sb作为表面活性剂
DOI：
10.1049/el:20000976
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发表时间：
2000
影响因子：
1.1
通讯作者：
A. Kasukawa
中科院分区：
文献类型：
--
作者：
H. Shimizu;K. Kumada;S. Uchiyama;A. Kasukawa
用气体源分子束外延（GSMBE）方法成功地生长了掺少量Sb的高应变Ga_（0.61）In_（0.39）AsySb_（1-y）（y ≥ 0.995）/GaAs单量子阱激光器。激光波长为1.185 µm，阈值电流密度低至280 A/cm 2，这是1.2 µm范围GaInAs量子薄膜（QF）激光器的最低报道之一。据作者所知，这是分子束外延生长的GaInAs/GaAs QF系统的最长激光波长。它已被证实为第一次，Sb反应在一个高度应变的GaInAs/GaAs系统作为一种表面活性剂，这增加了临界厚度，在该临界厚度处的生长模式从二维（2D）到三维（3D）的增长变化。
Highly strained Ga0.61In0.39AsySb1-y(y ≥ 0.995)/GaAs SQW lasers that incorporate a small amount of Sb have been successfully grown by gas-source molecular beam epitaxy (GSMBE). The lasing wavelength is 1.185 µm, and the threshold current density is as low as 280 A/cm2, which is one of the lowest ever reported for 1.2 µm range GaInAs quantum film (QF) lasers. The lasing wavelength is the longest value ever reported for MBE-grown GaInAs/GaAs QF system to the best of the authors' knowledge. It has been confirmed for the first time that Sb reacts in a highly strained GaInAs/GaAs system as a surfactant, which increases the critical thickness at which the growth mode changes from two-dimentional (2D) to three-dimentional (3D) growth.