Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy
Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy
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实时紫外光电子能谱研究 Si(100) 热氧化过程的生长动力学
DOI：
10.1016/0169-4332(96)00318-2
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发表时间：
1996
影响因子：
6.7
通讯作者：
N. Miyamoto
中科院分区：
文献类型：
--
作者：
Y. Enta;Y. Takegawa;M. Suemitsu;N. Miyamoto
通过实时紫外光电子能谱研究了 Si(100) 上第一亚单层内干氧的初始热氧化过程。对于 350–600°C 的氧化温度，O 2p 态强度的时间演变（形成氧化物的量的良好量度）呈现朗缪尔型吸附行为，在引入氧气后显示出快速增加，随后逐渐饱和。另一方面，对于 700°C 以上的温度，氧化的开始被延迟，并且整个时间的演变可以通过假设二维岛生长的模型很好地描述。通过考虑较高温度区域中氧化物分解过程的存在，对氧化动力学的这种差异给出了统一的解释。
Initial thermal oxidation processes by dry oxygen within the first submonolayer on Si(100) have been investigated by real time ultraviolet photoelectron spectroscopy. For oxidation temperatures at 350–600°C the time evolution of the O 2p state intensity, a good measure for the amount of the formed oxide, presented a Langmuir-type adsorption behavior, showing a rapid increase after the introduction of the oxygen followed by a gradual saturation. For temperatures above 700°C, on the other hand, the onset of the oxidation was delayed, and the whole time evolution was well described by a model assuming a two-dimensional island growth. A unified explanation is given for this difference in the oxidation kinetics by considering the presence of the oxide decomposition process in the higher temperature region.