Optical properties of InGaAs/AlAsSb type I single quantum wells lattice matched to InP
Optical properties of InGaAs/AlAsSb type I single quantum wells lattice matched to InP
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DOI：
10.1116/1.1394727
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发表时间：
2001-09-01
影响因子：
1.4
通讯作者：
Mozume, T
中科院分区：
文献类型：
--
作者：
Georgiev, N;Mozume, T
采用分子束外延技术生长了与InP衬底晶格匹配的InGaAs/AlAsSb量子阱结构，并对其进行了光致发光表征。研究了n=1电子到重空穴子带的激子跃迁，并利用包络函数方法计算了InGaAs/AlAsSb异质结的带边不连续性. I型带的带边不连续的阵容估计为约1.6 eV的作为终止的样品，表现出最低的成分波动的异质界面。占主导地位的光致发光谱线展宽机制被发现是单层波动的阱宽和一个随机的合金成分变化的子层，以及激子光学声子散射。使用一个优化的生长条件，在1.3-1.5妈妈波长范围内的短子带间跃迁测量耦合双量子阱结构。(C)2001年美国真空学会。
InGaAs/AlAsSb quantum well structures have been grown by molecular beam epitaxy nominally lattice matched to InP substrates and characterized by photoluminescence. The exciton transitions from the n=1 electron to heavy-hole subbands were investigated and the band-edge discontinuity of an InGaAs/AlAsSb heterostructure was evaluated using an envelope function method. The type I band lineup with a band-edge discontinuity was estimated to be about 1.6 eV for As terminated samples, which exhibit the lowest compositional fluctuations across heterointerfaces. The dominant photoluminescence line-broadening mechanisms were found to be monolayer fluctuations in the well width and a random alloy compositional variation in sublayers, as well as exciton-optical phonon scattering. Using an optimized growth condition, short intersubband transitions in the 1.3-1.5 mum wavelength range were measured in the coupled double quantum well structures. (C) 2001 American Vacuum Society.